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| SHINDENGEN Super Fast Recovery Rectifiers Super Fast Bridges D4SBL20U 200V 4A FEATURES *oe noise Low *oe Package SIL *oe High IFSM APPLICATION OUTLINE DIMENSIONS Case : 3S (Unit : mm) *oe power supply Switching *oe ome (Electrical) Appliances Home H *oe ffice Equipment, Telecommunication, Office O Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z V 200 V Maximum Reverse Voltage RM I 50Hz sine Average Rectified Forward Current wave, R-load With heatsink 4 Tc=108*Z A O 50Hz sine wave, R-load Without heatsink Ta=25*Z 2.5 IFSM Peak Surge Forward Current sine wave, Non-repetitive 1cycle peak value, Tj=25 50Hz 60 A Dielectric Strength VdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR i ecommended torque*0.5Nm*j * R F 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit V I =2A, Pulse measurement, Rating Max.0.98 of per diode V Forward Voltage FF I V=V,MPulse measurement, Rating of per diode Reverse Current Max.10EA R RR = Reverse Recovery Timerr I = 0.5A, 1A tF RI Max.35 ns j AEjcunction to case *@*@With heatsinkMax.5.5 Thermal Resistance AEjlunction to lead *@*@ Without heatsink j Max.6*Z/W AEjaunction to ambient Without heatsink ax.30 j M Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D4SBL20U 100 Forward Voltage 10 Forward Current IF [A] Tc=150C [TYP] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D4SBL20U Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 100 10 1 10 100 Reverse Voltage VR [V] D4SBL20U 10 Forward Power Dissipation Forward Power Dissipation PF [W] 8 SIN 6 4 2 0 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = Tjmax D4SBL20U 7 Derating Curve Heatsink Tc Tc Average Rectified Forward Current IO [A] 6 5 SIN 4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] Sine wave R-load with heatsink D4SBL20U 3 Derating Curve Average Rectified Forward Current IO [A] 2.5 SIN PCB Glass-epoxy substrate Soldering land 5mm 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM Sine wave R-load Free in air D4SBL20U 120 Peak Surge Forward Capability IFSM 10ms 10ms 100 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 80 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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